rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 140221 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . rf micro devices ? and rfmd ? are trademarks of rfmd, llc. bluetooth is a trademark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks, and registered trademarks are the property of their respective owners. ?2013, rf micro devices, in c. 1 of 3 S10040240P gaas push pull hybrid 4 0 mhz to 1 0 00 mhz the S10040240P is a hybrid push pull amplifier module. the part employs gaas die and is operated from 40mhz to 1000mhz. it provides excellent linearity and superior return loss performance with low noise and optimal reliability. package: sot - 115j features excellent linearity superior r eturn loss performance extremely low distortion optimal reliability low noise unconditionally stable under all terminations 2 4 .0 db min. gain at 1 000mhz 2 55 ma max. at 24v dc applications 4 0 mhz to 1 0 00 mhz cat v amplifier systems ordering information S10040240P box with 50 pieces absolute maximum rat ings parameter rating unit rf input voltage (single tone) 75 dbmv dc supply over - voltage (5 minutes) 30 v storage temperature - 40 to +100 c operating mounting base temperature - 30 to +100 c caution! esd sensitive device. rohs (restriction of hazardous substances): compliant per eu directive 2011/65/eu. exceeding any one or a combination of the absolute maximum rating conditions may cause permanent damage to the device. extended application of absolute maximum rating conditions to the device may reduce device reliability. specified typical performance or functional operation of the device under absolute maximum r ating conditions is not implie d. S10040240P
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 140221 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, in c. ("rfmd") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component ci rcuitry, recommended application circuitry and specifications at any time without prior notice. 2 of 3 S10040240P nominal operating parameters parameter specification unit condition min typ max general performance v + = 24v; t mb = 30c; z s = z l = 75 power gain 22.5 23.0 23.5 db f = 50 mhz 24.0 25.5 db f = 1 0 00 mhz slope [ 1 ] 1.0 2.5 db f = 4 0 mhz to 1 0 00 mhz flatness of frequency response 0.5 db f = 4 0 mhz to 1 0 00 mhz (peak to valley) input return loss 20.0 db f = 4 0 mhz to 1 60 mhz 18.0 db f = 1 60 mhz to 1 000 mhz output return loss 20.0 db f = 40mhz to 1 60 mhz 18.0 db f = 1 60 mhz to 8 70 mhz 15.0 db f = 870 mhz to 1000 mhz noise figure 2.5 3.5 db f = 50mhz to 1 0 00mhz total current consumption (dc) 250.0 255.0 ma distortion data 40mhz to 870 mhz v + = 24v; t mb = 30c; z s = z l = 75 ctb - 66 - 64 dbc 132 ch. flat, v o = 40dbmv [2] xmod - 59 - 57 dbc cso - 66 - 64 dbc 1. the slope is defined as the difference between the gain at the start frequency and the gain at the stop frequency. 2. 132 channels, ntsc f requency raster: 55.25mhz to 8 65 .25 mhz, +4 0 dbmv flat output level. composite second order (cso) - the cso parameter (both sum and difference products) is defined by the ncta. comp osite triple beat (ctb) - the ctb parameter is defined by the ncta. cross modulation (xmod) - cross modulation (xmod) is measured at baseband (selective voltmeter method), referenced to 100% modulation of the carrier being tested.
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 140221 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, in c. ("rfmd") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component ci rcuitry, recommended application circuitry and specifications at any time without prior notice. 3 of 3 S10040240P package drawing (dimensions in millimeters) 13, 4 1 2 3 5 7 8 9 r o q m 5 10mm 0 scale b n l f a d h ? g t s p j u i e c k european projection n o m i n a l m i n m a x a 4 4 , 6 0 , 2 4 4 , 4 4 4 , 8 b 1 3 , 6 0 , 2 4 4 , 4 1 3 , 8 c 2 0 , 4 0 , 5 1 9 , 9 2 0 , 9 d 8 0 , 1 5 7 , 8 5 8 , 1 5 e 1 2 , 6 0 , 1 5 1 2 , 4 5 1 2 , 7 5 f 3 8 , 1 0 , 2 3 7 , 9 3 8 , 3 g 4 + 0 , 2 / - 0 , 0 5 3 , 9 5 4 , 2 h 4 0 , 2 3 , 8 4 , 2 i 2 5 , 4 0 , 2 2 5 , 2 2 5 , 6 j u n c 6 - 3 2 - - k 4 , 2 0 , 2 4 , 0 4 , 4 l 2 7 , 2 0 , 2 2 7 , 0 2 7 , 4 m 1 1 , 6 0 , 5 1 1 , 1 1 2 , 1 n 5 , 8 0 , 4 5 , 4 6 , 2 o 0 , 2 5 0 , 0 2 0 , 2 3 0 , 2 7 p 0 , 4 5 0 , 0 3 0 , 4 2 0 , 4 8 q 2 , 5 4 0 , 3 2 , 2 4 2 , 8 4 r 2 , 5 4 0 , 5 2 , 0 4 3 , 0 4 s 2 , 5 4 0 , 2 5 2 , 2 9 2 , 7 9 t 5 , 0 8 0 , 2 5 4 , 8 3 5 , 3 3 u 5 , 0 8 0 , 2 5 4 , 8 3 5 , 3 3 p i n n a m e 1 i n p u t 2 - 3 g n d 4 5 + v b 6 7 - 8 g n d 9 o u t p u t pinning: notes:
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